Abstract—In the present work, Mn and Al co-doped copper oxide (CuO-Mn:Al) thin films were deposited on Si(100) and ITO glass substrates by radio frequency (RF) and direct current (DC) magnetron co-sputtering, and then the obtained films were annealed at 800 ℃. The crystal structure of films was evaluated by X-ray diffraction. The surface morphology of films was observed by scanning electronic microscope (SEM). Elemental composition of films was determined by energy dispersive X-Ray diffraction (EDX) and X-ray photoelectron spectroscopy (XPS). The resistivity and optical band gap of CuO-Mn:Al thin films were determined by four probe resistance tester and ultraviolet visible near infrared (UV-Vis-NIR) spectrophotometer, respectively. XRD, EDX and XPS results show the perfect doping of Mn and Al into CuO host lattice. The addition of Mn:Al into copper oxide thin films led to the resistivity decreases. In contrast, the optical band gap values increased upon the addition of Mn:Al.
Index Terms—Copper oxide films, electrical properties, magnetron co-sputtering, optical properties, surface morphology.
An-Tian Du and Guang-Rui Gu are with the Department of Physics, College of Science, Yanbian University, Yanji 133002, China (Corresponding author: Guang-Rui Gu; e-mail: 386757265@qq.com,.e-mail: grgu@ybu.edu.cn).
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Cite: An-Tian Du, Zhi-Peng San, Guang-Rui Gu, and Bao-Jia Wu, "Preparation and Characterization of Mn and Al co-doped Copper Oxide Films," International Journal of Materials, Mechanics and Manufacturing vol. 7, no. 2, pp. 77-81, 2019.